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Maximum mosfet current can be, transistor with small rdson. Preliminary specification this data sheet contains preliminary data. La733p amplifier transistors pnp silicon maximum ratings rating symbol value unit collectoremitter voltage vceo 48 vdc collectorbase voltage vcbo 60 vdc emitterbase voltage vebo 5. Npn medium power transistor features high current low saturation voltage complement to 2sb772 applications voltage regulation relay driver generic switch audio power amplifier dcdc converter description the device is a npn transistor manufactured by using planar technology resulting in rugged high performance devices. Recent listings manufacturer directory get instant insight into any electronic component. Philips semiconductors product specification nchannel enhancement mode bsh105 mos transistor electrical characteristics tj 25. Motorola master selection guide data book 1975 internet archive. Utc medium power low voltage transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Motorola amplifier transistors,alldatasheet, datasheet, datasheet search site for electronic. Transistor equivalent list datasheet, cross reference, circuit and application notes in pdf format. A539 datasheet, a539 pdf, a539 data sheet, a539 manual, a539 pdf, a539, datenblatt, electronics a539, alldatasheet, free, datasheet, datasheets, data sheet, datas. Nchannel enhancement mode bsh105 mos transistor definitions data sheet status objective specification this data sheet contains target or goal specifications for product development. Pinning pin description 1 emitter 2 base 3 collector, connected to case. Power dissipation 25c dc current gain hfe 4 a vce sat 1.
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C unless otherwise specified symbol parameter conditions min. Ta70c unless otherwise noted1n datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits. Description npn switching transistor in a to18 metal package. Nchannel enhancement mode mos transistor bsh103 limiting values in accordance with the absolute maximum rating system iec 4. Specification mentioned in this publication are subject to change without notice. Bc547b transistor datasheet pdf bcb transistor datasheet pdf, bcb equivalent. The crystal is clamped to the heat spreader alongside the heater transistor, amplifies it and passes a correction voltage to the heater driver transistor, tr1 if the temperature is, transistor tr2 in the base circuit of another to protect the latter from excess current is a very useful. The central semiconductor 1n5391 seriesdevices are silicon rectifiers designed for generalpurpose rectifier applications.
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